- RS 제품 번호:
- 897-7185
- 제조사 부품 번호:
- IKW30N60TFKSA1
- 제조업체:
- Infineon
일시 품절-다음 입고 날짜는 17/04/2026 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(2개가 1팩안에)
₩6,696.062
수량 | 한팩당 | 한팩당* |
2 + | ₩6,696.062 | ₩13,390.399 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 897-7185
- 제조사 부품 번호:
- IKW30N60TFKSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 45 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 187 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.1mm |
Energy Rating | 2.1mJ |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |
Gate Capacitance | 1630pF |