STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

사양
속성
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 250 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
90 <재고있음> 5-9영업일내 홍콩 발송
단가 Each (In a Tube of 30)
5,079.35
(exc. VAT)
수량
한(1)개당
Per Tube*
30 +
₩5,079.35
₩152,380.50
*다른 단위에 대한 가격 표시