STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 168-7754
- 제조사 부품 번호:
- STGW39NC60VD
- 제조업체:
- STMicroelectronics
일시 품절-다음 입고 날짜는 08/05/2024 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(30개가 1튜브안에)
₩6,540.821
| 수량 | 한팩당 | Per Tube* |
| 30 - 30 | ₩6,540.821 | ₩196,219.449 |
| 60 - 90 | ₩6,397.654 | ₩191,950.322 |
| 120 + | ₩6,256.212 | ₩187,686.369 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 168-7754
- 제조사 부품 번호:
- STGW39NC60VD
- 제조업체:
- STMicroelectronics
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |