Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS 제품 번호:
- 168-4561
- 제조사 부품 번호:
- 7MBR50VB-120-50
- 제조업체:
- Fuji Electric
단종
- RS 제품 번호:
- 168-4561
- 제조사 부품 번호:
- 7MBR50VB-120-50
- 제조업체:
- Fuji Electric
제정법과 컴플라이언스
- COO (Country of Origin):
- JP
제품 세부 사항
IGBT Modules 7-Pack, Fuji Electric
V-Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 280 W |
| Package Type | M712 |
| Configuration | 3 Phase Bridge |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |