IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 168-4435
- 제조사 부품 번호:
- IXGH40N120B2D1
- 제조업체:
- IXYS
30 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(30개가 1튜브안에)
₩22,642.762
| 수량 | 한팩당 | Per Tube* |
| 30 - 120 | ₩22,642.762 | ₩679,288.044 |
| 150 + | ₩20,377.969 | ₩611,359.757 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 168-4435
- 제조사 부품 번호:
- IXGH40N120B2D1
- 제조업체:
- IXYS
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제품 세부 사항
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |