- RS 제품 번호:
- 165-8176
- 제조사 부품 번호:
- IKW25N120T2FKSA1
- 제조업체:
- Infineon
90 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(30개가 1튜브안에)
₩7,192.833
수량 | 한팩당 | Per Tube* |
30 - 120 | ₩7,192.833 | ₩215,764.291 |
150 + | ₩6,473.55 | ₩194,185.792 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 165-8176
- 제조사 부품 번호:
- IKW25N120T2FKSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 349 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.1mm |
Minimum Operating Temperature | -40 °C |
Energy Rating | 4.3mJ |
Gate Capacitance | 1600pF |
Maximum Operating Temperature | +175 °C |