STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO, Through Hole

Based on trench-field stop (TFS) technology, the 1200 V IGBT M series is designed for applications working at a switching frequency between 2 and 20 kHz. With highly optimized conduction and turn-off characteristics, as well as turn-on losses, these IGBTs are ideal for use in hard-switching circuits in applications such as solar inverters, welding equipment, UPS and industrial motor drives.

Low loss IGBT series for applications up to 20 kHz
High robustness and reliability thanks to 1200 V breakdown voltage
Thin IGBT die for increased thermal resistance
Positive VCE(sat) temperature coefficient, with tight parameter distribution
Optimized diode for fast recovery

11 μs of short-circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode