Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
- RS 제품 번호:
- 162-3334
- 제조사 부품 번호:
- IKZ75N65ES5XKSA1
- 제조업체:
- Infineon
단종
- RS 제품 번호:
- 162-3334
- 제조사 부품 번호:
- IKZ75N65ES5XKSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.
Very low control inductance loop
Extra emitter pin, the forth package pin, for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
Over 20% total switching loses reduction compared to standard TO-247-3
System efficiency improvement or power density increase compared to standard TO-247-3
Extra emitter pin, the forth package pin, for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
Over 20% total switching loses reduction compared to standard TO-247-3
System efficiency improvement or power density increase compared to standard TO-247-3
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 395 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Switching Speed | 40kHz |
| Transistor Configuration | Single |
| Dimensions | 15.9 x 5.1 x 22.5mm |
| Gate Capacitance | 4500pF |
| Minimum Operating Temperature | -40 °C |
| Energy Rating | 2.8mJ |
| Maximum Operating Temperature | +175 °C |