ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247

  • RS 제품 번호 145-4482
  • 제조사 부품 번호 HGTG18N120BND
  • 제조업체 ON Semiconductor
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COO (Country of Origin): KR
제품 세부 사항

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

사양
속성
Maximum Continuous Collector Current 54 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 390 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
300 <재고있음> 5-9영업일내 홍콩 발송
단가 Each (In a Tube of 30)
5,093.30
(exc. VAT)
수량
한(1)개당
Per Tube*
30 +
₩5,093.30
₩152,799.00
*다른 단위에 대한 가격 표시