onsemi FGA30N120FTDTU IGBT, 60 A 1200 V, 3-Pin TO-3PN, Through Hole
- RS 제품 번호:
- 145-4446
- 제조사 부품 번호:
- FGA30N120FTDTU
- 제조업체:
- ON Semiconductor
단종
- RS 제품 번호:
- 145-4446
- 제조사 부품 번호:
- FGA30N120FTDTU
- 제조업체:
- ON Semiconductor
제정법과 컴플라이언스
제품 세부 사항
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 339 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |