ON Semiconductor NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247

  • RS 제품 번호 145-3481
  • 제조사 부품 번호 NGTB30N135IHR1WG
  • 제조업체 ON Semiconductor
참조 문서
제정법과 컴플라이언스
ROHS 준수
COO (Country of Origin): CN
제품 세부 사항

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

사양
속성
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1350 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 394 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.25mm
Width 5.3mm
Height 21.4mm
Dimensions 16.25 x 5.3 x 21.4mm
Gate Capacitance 5530pF
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
일시 품절-다음 입고 날짜는 24/06/2020 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
단가 Each (In a Tube of 30)
5,358.35
(exc. VAT)
수량
한(1)개당
Per Tube*
30 +
₩5,358.35
₩160,750.50
*다른 단위에 대한 가격 표시