Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 124-8809
제조사 부품 번호:: IKW30N60TFKSA1
제조업체:: Infineon

Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

일시 품절-다음 입고 날짜는 25/04/2024 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.

추가완료!

단가 개당가격(30개가 1튜브안에)

₩5,052.232

수량	한팩당	Per Tube*
30 - 120	₩5,052.232	₩151,561.788
150 +	₩4,546.836	₩136,405.092
*다른 단위에 대한 가격 표시

RS 제품 번호:: 124-8809
제조사 부품 번호:: IKW30N60TFKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

COO (Country of Origin):: CN

제품 세부 사항

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

사양

속성	값
Maximum Continuous Collector Current	45 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	187 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Minimum Operating Temperature	-40 °C
Gate Capacitance	1630pF
Maximum Operating Temperature	+175 °C
Energy Rating	2.1mJ