- RS 제품 번호:
- 124-0910P
- 제조사 부품 번호:
- RJH65T47DPQ-A0#T0
- 제조업체:
- Renesas Electronics
- RS 제품 번호:
- 124-0910P
- 제조사 부품 번호:
- RJH65T47DPQ-A0#T0
- 제조업체:
- Renesas Electronics
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 90 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 375 W |
Package Type | TO-247A |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.94 x 5.02 x 21.13mm |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 3000pF |