Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
- RS 제품 번호:
- 124-0910
- 제조사 부품 번호:
- RJH65T47DPQ-A0#T0
- 제조업체:
- Renesas Electronics
단종
- RS 제품 번호:
- 124-0910
- 제조사 부품 번호:
- RJH65T47DPQ-A0#T0
- 제조업체:
- Renesas Electronics
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
|---|---|
| Maximum Continuous Collector Current | 90 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Gate Capacitance | 3000pF |
| Maximum Operating Temperature | +175 °C |