- RS 제품 번호:
- 110-9135
- 제조사 부품 번호:
- 7MBR50VB-120-50
- 제조업체:
- Fuji Electric
- RS 제품 번호:
- 110-9135
- 제조사 부품 번호:
- 7MBR50VB-120-50
- 제조업체:
- Fuji Electric
제정법과 컴플라이언스
제품 세부 사항
IGBT Modules 7-Pack, Fuji Electric
V-Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 280 W |
Package Type | M712 |
Configuration | 3 Phase Bridge |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 24 |
Transistor Configuration | 3 Phase |
Dimensions | 122 x 62 x 17mm |
Maximum Operating Temperature | +150 °C |