- RS 제품 번호:
- 838-6923
- 제조사 부품 번호:
- FS75R12KE3GBOSA1
- 제조업체:
- Infineon
3 <재고있음> 5-9영업일내 홍콩 발송
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단가 개당
₩203,850.407
수량 | 한팩당 |
1 - 2 | ₩203,850.407 |
3 - 4 | ₩199,772.743 |
5 + | ₩195,777.875 |
- RS 제품 번호:
- 838-6923
- 제조사 부품 번호:
- FS75R12KE3GBOSA1
- 제조업체:
- Infineon
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제품 세부 사항
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 355 W |
Package Type | ECONO3 |
Configuration | 3 Phase Bridge |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 35 |
Switching Speed | 1MHz |
Transistor Configuration | 3 Phase |
Dimensions | 122 x 62 x 17mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |