- RS 제품 번호:
- 747-1096
- 제조사 부품 번호:
- 2MBi300VE-120-50
- 제조업체:
- Fuji Electric
단종
- RS 제품 번호:
- 747-1096
- 제조사 부품 번호:
- 2MBi300VE-120-50
- 제조업체:
- Fuji Electric
제정법과 컴플라이언스
제품 세부 사항
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 360 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 2.2 kW |
Configuration | Series |
Package Type | M277 |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 110 x 80 x 30mm |
Maximum Operating Temperature | +150 °C |