- RS 제품 번호:
- 168-8761
- 제조사 부품 번호:
- F475R12KS4B11BOSA1
- 제조업체:
- Infineon
본 제품은 백오더/선주문 진행으로는 불가한 상황입니다.
죄송합니다만, 본 제품에 대한 재고가 없으며, 현재는 백오더/선주문 진행이 불가합니다.
추가완료!
단가 개당가격(10개가 1박스안에)
₩341,685.441
수량 | 한팩당 | Per Box* |
10 - 40 | ₩341,685.441 | ₩3,416,845.786 |
50 + | ₩307,515.172 | ₩3,075,160.345 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 168-8761
- 제조사 부품 번호:
- F475R12KS4B11BOSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
사양
속성 | 값 |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 500 W |
Configuration | Dual Half Bridge |
Package Type | ECONO2 |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 24 |
Switching Speed | 1MHz |
Transistor Configuration | Dual Half Bridge |
Dimensions | 107.5 x 45 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +125 °C |