Fuji Electric 7MBR50VB-120-50, M712 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Through Hole

  • RS 제품 번호 168-4561
  • 제조사 부품 번호 7MBR50VB-120-50
  • 제조업체 Fuji Electric
참조 문서
제정법과 컴플라이언스
ROHS 준수
COO (Country of Origin): JP
제품 세부 사항

IGBT Modules 7-Pack, Fuji Electric

V-Series

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

사양
속성
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Through Hole
Package Type M712
Pin Count 24
Maximum Power Dissipation 280 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +150 °C
Width 62mm
30 <재고있음> 5-9영업일내 홍콩 발송
단가 Each (In a Box of 10)
190,312.10
(exc. VAT)
수량
한(1)개당
Per Box*
10 +
₩190,312.10
₩1,903,122.55
*다른 단위에 대한 가격 표시