Infineon FS150R12KE3BOSA1, AG-ECONO3-4 3 Phase Bridge IGBT Module, 200 A max, 1200 V, Panel Mount

  • RS 제품 번호 111-6090
  • 제조사 부품 번호 FS150R12KE3BOSA1
  • 제조업체 Infineon
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COO (Country of Origin): MY
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IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

사양
속성
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type AG-ECONO3-4
Maximum Power Dissipation 700 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +125 °C
Width 62mm
Minimum Operating Temperature -40 °C
2 <재고있음> 5-9영업일내 홍콩 발송
단가 Each
259,394.05
(exc. VAT)
수량
한(1)개당
1 - 2
₩259,394.05
3 - 4
₩252,191.20
5 - 6
₩245,361.90
7 - 9
₩238,907.70
10 +
₩235,801.50