onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204
- RS 제품 번호:
- 100-7565
- 제조사 부품 번호:
- MJ11016G
- 제조업체:
- onsemi
600 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(100개가 1트레이안에)
₩5,443.784
| 수량 | 한팩당 | Per Tray* |
| 100 - 100 | ₩5,443.784 | ₩544,378.44 |
| 200 - 300 | ₩5,324.766 | ₩532,545.626 |
| 400 + | ₩5,207.473 | ₩520,712.812 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 100-7565
- 제조사 부품 번호:
- MJ11016G
- 제조업체:
- onsemi
제정법과 컴플라이언스
- COO (Country of Origin):
- CZ
제품 세부 사항
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 120 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-204 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 200 |
| Maximum Base Emitter Saturation Voltage | 5 V |
| Maximum Collector Base Voltage | 120 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Width | 26.67mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +200 °C |
| Dimensions | 39.37 x 26.67 x 8.51mm |
| Length | 39.37mm |
| Height | 8.51mm |