onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204
- RS 제품 번호:
- 463-000
- 제조사 부품 번호:
- MJ11016G
- 제조업체:
- onsemi
264 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(2개가 1팩안에)
₩8,010.436
| 수량 | 한팩당 | 한팩당* |
| 2 - 24 | ₩8,010.436 | ₩16,022.596 |
| 26 - 48 | ₩7,810.347 | ₩15,620.694 |
| 50 + | ₩7,689.604 | ₩15,380.933 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 463-000
- 제조사 부품 번호:
- MJ11016G
- 제조업체:
- onsemi
제정법과 컴플라이언스
제품 세부 사항
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 120 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-204 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 200 |
| Maximum Base Emitter Saturation Voltage | 5 V |
| Maximum Collector Base Voltage | 120 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Dimensions | 39.37 x 26.67 x 8.51mm |
| Height | 8.51mm |
| Minimum Operating Temperature | -55 °C |
| Width | 26.67mm |
| Length | 39.37mm |
| Maximum Operating Temperature | +200 °C |